The left chart on this slide shows the benchmarking that illustrates the 30% lower EOFF energy losses of the ‘V’ series IGBT’s versus the nearest competitor. The right chart shows the 30% lower Vce sat conduction losses exhibited by ST’s ‘H-B’ series compared to the nearest competitor. In both cases note the nearly non-existent turn off tail, below the 10% turn-off area when compared to the competitor’s devices. The hump in their dotted line curve represents significantly more energy lost. This can also force the designer to reduce device duty cycles as larger dead times in half bridge circuits must be employed to prevent excessive losses or failures in the opposing device. This will also lower output voltage due to the lower duty cycle, thus reducing available power to the load.