In summary, the Trench Gate Field Stop Technology wafer is roughly four times thinner than the older, Planar Punch Through technology. This results in a significant improvement in junction-to-case thermal resistance. TGFS technology also provides lower switching losses compared to PT devices. A slightly positive Vce saturation temperature coefficient is exhibited by TGFS devices, which enables improved current sharing characteristics when paralleling discrete devices or using parallel die in modules. PT technology devices exhibit a negative Vce saturation temperature coefficient which can create a condition for thermal runaway when paralleling devices, leading to device failure. Non-Punch Through (NPT) technology devices have a much higher positive Vce saturation temperature coefficient, which can incur greater conduction losses, due to higher Vce saturation values at normal operating temperatures. ST’s TGFS allows a maximum junction temperature of 175°C compared with 150°C which makes for more reliable, longer lifetime devices and a greater thermal margin in designs. “SLLIMM” stands for “Small Low Loss Intelligent Molded Module” and is the STMicroelectronics trade name for Intelligent Power Modules, “SLLIMM – nano” refers to ST’s smallest IPM offerings. The current range of SLLIMM and SLLIMM–nano devices covering a power range from 100 W to greater than 3 kW.