A case study will help clarify how dramatically an end application can be improved by designing with SiC MOSFETs over IGBTs. An internal evaluation has been preformed in a 5 kW boost converter using the SCT30N120 and the previously characterized 25 A IGBT. The investigation will look at the performance of each at 25 kHz, 100 kHz, and 125 kHz switching frequency. The remaining conditions will remain static as described in the slide here.