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It is almost as easy to drive the SiC MOSFET as with a standard silicon MOSFET. One must only increase the drive voltage to +20 V and provide adequate gate drive current. Simple and mature gate drivers in the market can be successfully adapted. There are also advanced controllers like the STGAP1S that provide additional features and simplicity. Finally, while not necessary, it is recommended to drive the SiC FET off with some small negative voltage in high dv/dt bridge topologies to prevent inadvertent turn on due to drain to gate coupling through the drain to gate capacitance (Miller turn-on effect).
PTM Published on: 2016-05-06
