ST Microelectronics has a comprehensive portfolio of power transistors including low voltage MOSFETs from 20 V to 200 V with advanced DeepGATE trench technology, advanced high voltage MOSFET super-junction technology ranging up to 1500 V drain rating, and low loss trench gate field stop IGBTs. Expanding this strong portfolio of power transistors is the Silicon Carbide (SiC) MOSFET technology which allows for ever improving cost and performance in high power applications.