The target market for SiC FETs is where IGBTs have historically been the power switch of choice: high current, high voltage applications. As such, a comparison between SiC FETs and IGBTs is necessary. In the example shown here, the SCT30N120, rated at 34 A at 100°C, is compared to an ST IGBT rated at 25 A at 100°C, both are 1200 V devices. This chart makes clear several advantages in using Silicon Carbide. One, for devices rated similarly in current, the SiC FET is almost half the size in die area compared to the IGBT, increasing potential power density of end applications. Two, that switching losses, especially turn off losses, are considerably lower than that of the IGBT. This allows for much higher switching frequency. Lastly, the performance at high operating temperature is dramatically improved in both switching loss and conducted loss. The end result is the optimal switch for high power, high frequency, and high temperature applications.