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The second SiC FET introduced by ST is the SCT20N120, a lower current, lower cost device as compared to the SCT30N120. It is rated at 20 A and 1200 V in the same HiP247 package that allows for operation up to 200°C. It is also in full production. The RDSON at 20 V gate drive is 200 mΩ at 25°C while only increasing to 225 mΩ at 125°C.
PTM Published on: 2016-05-06
