SiC and Gallium Nitride (GaN) technologies are based on wide bandgap materials that are revolutionizing the power industry. GaN promises to dramatically improve the performance of sub 1000 V MOSFETs while SiC is best suited for greater than 1000 V components. The key applications that can take advantage of SiC technology include high voltage motor drives, high power UPS, high voltage photovoltaic systems and the quickly growing electric vehicle market. Any application presently using IGBTs at greater than 1000 V ratings can see improvements using SiC MOSFETs.