Here we see the Rdson over temperature curves of a standard ST silicon MOSFET, the ST Silicon Carbide MOSFET, and the SiC MOSFET from two competitors.  Standard silicon will exhibit well over 2 times the typical 25 C Rdson when operated up to 150 degrees Celsius.  Competitive SiC MOSFETs are a little better, showing 1.8 and 1.5 times the room temperature rated Rdson when operating at 150 C.  Now look at the lower curve for the ST SiC technology.  It only increases 10 percent at 150 degrees C while also being able to operate up to 200 C maximum.  Even at 200 degrees C operating temperature, the ST SiC FET has only increased its Rdson by 30%.  For this reason, it is important to compare the ST technology with competition at the expected operating temperature and not just by the 25 degree ratings.