The technological advantages of ST Microelectronics’ SiC FETs can be broken down into four categories. First is the performance characteristics of the technology. SiC exhibits extremely low power losses in both conduction and switching. The MOSFET contains a true SiC body diode which allows for high efficiencies in bridges requiring current commutation through a switch anti-parallel diode. Also, the ST SiC FET exhibits an extremely flat RDS_ON curve over temperature unseen in standard silicon devices. Because SiC FETs do not exhibit the tail current seen in IGBTs, the devices are suitable for high switching frequency applications. Increasing the frequency of the power system allows for the use of smaller capacitors and magnetics in the design, leading to lower cost and smaller size. Unlike other SiC transistors like BJTs and JFETs, the SiC MOSFET is very easy to drive, similar to standard MOSFETs. The only difference is a larger 20 V drive voltage and a few negative volts on turn off for the most sensitive applications. A simple drive circuit reduces the number of components and complexity of the final design as compared to non-MOSFET SiC solutions. Finally, ST SiC MOSFETs in the HiP247 package are rated to 200°C for outstanding reliability in the most thermally demanding applications as well as allowing for a reduction in the cooling requirements of the overall system.