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Silicon Carbide MOSFETs Slide 15

There is still room to further increase the switching frequency of this design. At 5 kW output power, the SiC FET (the hottest power component in the design) only reaches 90°C operating temperature while switching at 125 kHz. Here 130°C case temperature is objectively defined as a max operating temperature, in line with many application derating guidelines.

PTM Published on: 2016-05-06