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Silicon Carbide MOSFETs Slide 22

ST offers an advanced gate driver, the STGAP1S. It is a single channel, 4000 V galvanically isolated gate driver with many features ideal for driving SiC FETs. It can source and sink 5 A into the gate of the device, has a gate clamp to protect from dv/dt induced turn on, has separate on/off drive pins for turning off the switching characteristics, and incorporates a high speed comparator and high bandwidth op-amp for current sensing and feedback. Further information can be found on www.st.com.

PTM Published on: 2016-05-06