Shown here is a data brief on the first SiC FET introduced by ST in 2015, the SCT30N120. It is a 45 A, 1200 V FET in the Hip247 package. This package is identical in form to the industry standard TO-247, but is comprised of materials capable of qualifying the part to 200°C operating temperature. It is in full production with data available on www.st.com. When driven at 20 V from gate to source, the RDS_ON at 25°C is only 80 mΩ. Even more remarkable is that at 125°C operation temperature, the RDS_ON only increases to 85 mΩ.