The LET Series, based on the advanced STH5P LDMOS technology, is targeted for operation up to 2 GHz and specifically designed for applications operating up to 36 V, thanks to its high Drain – Source breakdown voltage (>80 V). A significant improvement in terms of RF performance (+3 dB gain,+15% efficiency), ruggedness and reliability makes this new product line ideal in applications such as private mobile radio base station, Broadband Government communications, Avionics systems and L-band satellite uplink equipment. Furthermore this new product family, housed in both ceramic and in cost-effective Power SO-10RF plastic packages, yields increased power saturation and less distortion at higher power levels. The recently introduced LET9180 (180 W – 32 V / 860 MHz) is housed in M246 ceramic package and capable of operation from 1 MHz up to 2 GHz. Additionally, a 200 W / 32 V – 1 GHz housed in STAC244 air cavity package version is currently in development.