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Silicon power MOSFETs need a surrounding package typically made of a copper leadframe, some aluminum, gold, or copper wires, all in a molded epoxy envelope. Connections need to be made to the top and bottom of the vertical silicon device, the plastic molding is needed to keep moisture from penetrating to the active device, and there needs to be a means of getting the heat out of the part. Traditional power MOSFET packages such as the SO8, TO220, or DPAK add cost, electrical and thermal resistance, and increase reliability and quality risks to the product. eGaN on silicon can be used as a “flip chip” without compromise of electrical, thermal, or reliability characteristics. From this cross section users can see that the active device region is completely encapsulated by passivating layers. In short, eGaN on silicon eliminates the need for a package and therefore also eliminates both the cost, wasted board space, added thermal and electrical resistance, and the most common reliability issues plaguing packaged power devices.
