EPC’s product offering runs from 40V to 200V, 4mΩ to 100mΩ forming a broad matrix of devices. Packaging is in wafer level line grid arrays where the gate pad is in one corner, and source and drain alternate to accomplish low inductive and low resistance paths to the drain and source. Initially there will be small and smaller versions of each voltage rating. Going forward, the matrix will be filled in as demand is identified. Additionally, EPC will introduce product for users wanting up to 600V blocking capability. At that point, about 90% of the applications for power MOSFETs can be successfully addressed with eGaN FETs from EPC.