eGaN Basics

eGaN® Basics

EPC

This tutorial covers the basics of EPC’s enhancement mode gallium nitride (eGaN®) transistors. EPC’s eGaN® transistors give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to gain efficiency advantages, size advantages, or a combination of both.

Related Parts

图片制造商零件编号描述功能嵌入式使用的 IC/零件可供货数量价格查看详情
BOARD DEV FOR EPC2015 40V GANEPC9001BOARD DEV FOR EPC2015 40V GAN半 H 桥驱动器（外部 FET）无EPC20150 - 立即发货$732.61查看详情
BOARD DEV FOR EPC2001 100V EGANEPC9017BOARD DEV FOR EPC2001 100V EGAN半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$966.63查看详情
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BOARD DEV FOR EPC2001 100V GANEPC9002BOARD DEV FOR EPC2001 100V GAN半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$732.61查看详情
PTM Published on: 2010-09-27

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.