eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

Related Parts

图片制造商零件编号描述功能嵌入式使用的 IC/零件可供货数量价格查看详情
BOARD DEV FOR EPC2015 40V GANEPC9001BOARD DEV FOR EPC2015 40V GAN半 H 桥驱动器（外部 FET）无EPC20150 - 立即发货$732.61查看详情
BOARD DEV FOR EPC2001 100V EGANEPC9017BOARD DEV FOR EPC2001 100V EGAN半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$966.63查看详情
BOARD DEV FOR EPC8007 40V EGANEPC9027BOARD DEV FOR EPC8007 40V EGAN半 H 桥驱动器（外部 FET）无EPC80070 - 立即发货$1,170.14查看详情
BOARD DEV FOR EPC2001 100V GANEPC9002BOARD DEV FOR EPC2001 100V GAN半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$732.61查看详情
PTM Published on: 2010-10-06

Related Articles and Blogs

DigiKey 提供的功率 GaN 产品和资源 当前氮化镓 (GaN) 技术正在不断地运用到电源设计领域。这篇博客提供了一些背景信息，并介绍了 DigiKey 目前提供的一些相关 GaN 产品和资源。
High-Step-Down-Ratio Buck Converters for Intermediate Bus Architectures Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.

Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.