The ultrafast switching speeds of EPC eGaN FETs enable single-stage, non isolated conversion of 48V to low voltage. The 48V commutation occurs in several nanoseconds, and is unprecedented in power conversion. This figure shows the measured efficiency when two converters; one silicon based and one eGaN based, were operated at 500kHz. A quick glance shows the eGaN FET converters demonstrating their advantage at higher frequency – the eGaN converter is about 4% more efficient over most of the load range. At 500kHz there is also a substantial system size advantage when compared with the 300kHz circuit.