Slide 1 Slide 2 Slide 3 Slide 4 Slide 5 Slide 6 Slide 7 Slide 8 Slide 9 Slide 10 Slide 11 Slide 12 Slide 13 Slide 14 Slide 15 Product List
eGaN-Basics-Slide9

The ultrafast switching speeds of EPC eGaN FETs enable single-stage, non isolated conversion of 48V to low voltage. The 48V commutation occurs in several nanoseconds, and is unprecedented in power conversion. This figure shows the measured efficiency when two converters; one silicon based and one eGaN based, were operated at 500kHz. A quick glance shows the eGaN FET converters demonstrating their advantage at higher frequency – the eGaN converter is about 4% more efficient over most of the load range. At 500kHz there is also a substantial system size advantage when compared with the 300kHz circuit.

PTM Published on: 2010-09-27