At the time of the founding of EPC, it became clear to the three founders that silicon had reached performance limits. At that time, a possible candidate to displace silicon was gallium nitride, but there were significant problems in cost and device capability. The initial EPC team vowed to develop GaN products that could be used as cost effective power MOSFET replacements which would require innovation in manufacturing, material science, and device physics. In June 2009, EPC delivered the first commercial enhancement mode GaN transistors that were manufactured in a low-cost foundry in Taiwan used to produce standard silicon CMOS product. With this milestone reached, EPC, and the entire power management industry, have begun a new journey that holds great promise for a step function of new value added possibilities for the users.