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eGaN-Basics-Slide11

In a hard switched full bridge, silicon has a very difficult time. Power dissipation is the limiting factor in pushing output current up. In this case, two silicon devices were used in parallel in each quadrant of the full-bridge. When replaced by EPC eGaN, the power dissipation drops dramatically. Please note that the power savings should be multiplied times four because the savings would be applicable for each quadrant of the full-bridge.

PTM Published on: 2010-09-27