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The advantage of eGaN starts with conductivity. As a high electron mobility transistor, or “HEMT”, on-resistance (RDS(on)) times area is much lower than that of silicon allowing higher current in a smaller device. As a lateral device, the capacitances are much lower than those of trench MOSFETs per area allowing very high switching speeds. Because there are no minority carriers, there is no stored charge and no reverse recovery. EPC eGaN has an RDS(on) temperature coefficient that is much lower than silicon. The threshold voltage (VGS(th)) temperature coefficient is close to 1, where silicon is sharply negative. This allows eGaN to be kept in the off state at high temperatures. In addition, with the its high mobility, eGaN devices can be designed for high voltages with much less impact on RDS(on) than silicon. Device grade GaN can be grown on top of silicon. This keeps the material price in line with silicon MOSFETs. GaN-on-silicon offers the advantage of self-isolation; the active area is isolated from the substrate. This allows efficient heatsinking and monolithic integration of components for future system-on-chip power products. EPC has developed the world’s first enhancement mode GaN devices to be offered on the market. This is critical to power conversion as it allows control of the power to the load even with no system power.
