As eGaN is a young technology, it has several orders of magnitude to advance while Silicon is fast approaching its theoretical limits. Advances in Silicon are slow, small, and costly. The graph shows the theoretical limit of silicon, silicon carbide, and gallium nitride as measured by Rds(on) times area for a given voltage. EPC’s first generation eGaN devices are represented along the green line. eGaN is just beginning its journey towards its theoretical limit.