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In order to make EPC’s eGaN FETs easy to use, they developed devices that behave very much like silicon power MOSFETs. This allows experienced designers to leverage their knowledge of power MOSFET design to achieve greater performance than possible in the past. There are two key differences to consider when designing with eGaN. The devices are extremely fast, and there is less overhead between the recommended gate drive voltage and the absolute maximum gate drive voltage. The key to handling both of these is in the layout. The two critical paths are the DC Loop and the Gate drive loops. To assist in design and evaluation, EPC has developed a series of Development Boards that are proven to effectively and efficiently use the devices. These development boards contain all of, and only the critical elements of this section of the design, and are designed to be quickly integrated into existing designs. This allows evaluation under any conditions where the circuit block is applicable. All of the connections to the development boards are non-critical, and can tolerate stray inductance. All of the design files, including schematic, bill of materials, layout and Gerber files are available from the EPC website. This not only allows a direct comparison to an existing solution, but a complete design that can be dropped right into a system.
