NAND Flash memory fundamentally operates by accurate voltage manipulation and control applied to memory cells (transistors). Naturally, supply voltage and power fluctuations and instability affects reliability of NAND media thereby directly affecting data integrity. Programming and erasing NAND memory cells require time (micro or milliseconds depending on operation) to complete successfully, and ensure data has been written as expected by the client device to NAND media. In the event of a surprise power loss, power cycling or voltage glitch, data sent by the client device may not be committed to NAND potentially resulting in data corruption.