 |
COMPUTER |
Key Components for Stationary Computing
CAPACITORS
TR3
Molded Case SMD Tantalum Chip Capacitor
Features
- Low ESR
- 100 % surge current tested (C, D, and E case sizes)
- Molded case available in seven case codes
- Terminations: 100 % matte tin, standard tin/lead available
 TR3
|
RESISTORS, NON-LINEAR
NTCS0603E3
Glass-Protected SMD 0603 NTC Thermistor
Features
- Tolerance on R25 down to 1 %, and on B25/85 down to 1 %
- High operating temperature up to 150 °C
NTCS0603E3
|
MOSFETs
SiRA10DP/SiRA00DP
Single, 30 V N-Channel Power MOSFETs
Features
- Highly efficient TrenchFET® Gen IV technology for increased power density
- Thermally enhanced PowerPAK® SO-8 packaging
- Maximum on-resistance down to 0.001 Ω
- Typical gate charge down to 34 nC at VGS = 10 V
SiRA10DP SiRA00DP |
OPTOELECTRONICS
VLMx1300
0603 LED Indicator
Features
- Super red, soft orange, yellow, yellowgreen, true-green, and blue
- Exceptionally bright in a ChipLED package
- Viewing angle of 130°
- 1.6 mm x 0.8 mm x 0.8 mm height
VLMS1300, VLMO1300, VLMY1300, VLMG1300, VLMTG1300, VLMB1300, VLMB1310 |
MOSFETs
SiHP22N60E/SiHG47N60E
Single, 600 V N-Channel Power MOSFETs
Features
- High performance E Series high-voltage Super Junction technology
- Maximum current up to 47 A
- TO-220 and TO-247 packaging
- Maximum on-resistance down to 0.064 Ω atVGS = 10 V
SiHP22N60E SiHG47N60E |
OPTOELECTRONICS
TCZT8020 - Door or Blade Sensor
Matched Emitter/Detector Pair
Features
- Typical output current under test: IC = 0.5 mA with gap width of 4 mm
- Transmissive or reflective sensor with 2-pin through hole components
- Variable gap width; based on application
- Angle of half intensity: ± 25°
TCZT8020 |
ICs
SiC780
50 A, 16 V DrMOS Integrated Power Stage
Features
- 93 % peak efficiency
- High switching frequency up to 1 MHz
- Compliant with Intel DrMOS 4.0 specifications
- Packaged in a 40 lead QFN,
6 mm x 6 mm x 0.75 mm
SiC780 |
DIODES
SMCJxx
1500 W SMC TRANSZORB® TVS VWM = 5 V ∼ 188 V
Features
- 1500 W peak pulse power capability at10/1000 µs waveform
- Very fast response time
- Low profile SMC package
- Excellent clamping capability
SMCJ5.0A thru SMCJ188CA SMCJ5.0A thru SMCJ188CA (Halogen-Free) |
INDUCTORS
IHLP-2525CZ
Low-Profile, High-Current IHLP® Inductor
Features
- Shielded construction
- Handles high transient current spikes without saturation
- Ultra-low buzz noise due to composite construction
- 100 % lead (Pb)-free and RoHS-compliant
IHLP-2525CZ-01 IHLP-2525CZ-06 IHLP-2525CZ-07
IHLP-2525CZ-11 IHLP-2525CZ-51 IHLP-2525CZ-1A
IHLP-2525CZ-5A IHLP-2525CZ-A1 |
|
CAPACITORS
293D
SMD Tantalum Molded Chip Capacitor
Features
- Tantamount®, standard industrial grade
- Molded case available in six case codes
- Terminations: 100 % matte tin, standard, tin/lead available
- Compatible with high volume automatic pick and place equipmen
293D
|
RESISTORS
WSL2512
SMD, Power Metal Strip® Resistor
Features
- 1 W current sensing resistor in 2512 package size
- Features a very low 0.5 mΩ to 500 mΩ resistance value range
- Standard tolerance of 1.0 % with 0.5 % available
- High-temperature performance up to + 170 °C
WSL2512
|
MOSFETs
Si7431DP
Single, - 200 V P-Channel Power MOSFET
Features
- 200 V p-channel technology
- Thermally enhanced PowerPAK® SO-8 packaging
- Maximum on-resistance down to 0.174 Ω
Si7431DP |
MOSFETs
IRF820
Single, 500 V N-Channel Power MOSFET
Features
- Maximum current of 2.5 A
- TO-220 packaging
- Maximum on-resistance of 3 Ω at VGS = 10 V
- Typical gate charge of 16 nC at VGS = 10 V
IRF820 |
DIODES
SMBJxx
600 W SMB TRANSZORB® TVS VWM = 5 V ∼ 188 V
Features
- Low profile SMB package
- 600 W peak pulse power capability with 10/1000 µs waveform
- Excellent clamping capability
- Very fast response time
SMBJ5.0A thru SMBJ188A SMBJ5.0A thru SMBJ188A (Halogen-Free) |
ICs
SiC401
Scalable 10 A to 15 A, 30 V, Buck Regulator
Features
- Ultrafast transient response
- Supports all ceramic capacitor solution with no external ESR requirement
- Full protection set of OTP, SCP, UVP, OVP
- Compact 32 lead QFN 5 mm x 5 mm package
SiC401 |
RESISTORS, NON-LINEAR
NTCS0402E3
Glass-Protected SMD 0402 NTC Thermistor
Features
- Tolerance on R25 down to 1 %, and on B25/85 down to 1 %
- High operating temperature up to 150 °C
NTCS0402E3.....T |
INDUCTORS
IHLP-2525CZ
Low-Profile, High-Current IHLP® Inductor
Features
- Shielded construction
- Handles high transient current spikes without saturation
- Ultra-low buzz noise due to composite construction
- 100 % lead (Pb)-free and RoHS-compliant
IHLP-2525CZ-01 IHLP-2525CZ-06 IHLP-2525CZ-07
IHLP-2525CZ-11 IHLP-2525CZ-51 IHLP-2525CZ-1A
IHLP-2525CZ-5A IHLP-2525CZ-A1 |
CAPACITORS
VJ.....W1BC Series
SMD Multilayer Ceramic Chip Capacitors and Arrays (Including 0603)
Features
- Available from 0201 to 1210 body sizes
- C0G (NP0), X5R, X7R, Y5V, high Q and ultra high Q/low ESR dielectric
- Chip array size 0612 with 4 capacitors inside
- Built with dry sheet technology process and 100 % tin termination, fully RoHS-compliant
VJ....W1BC Basic Commodity Series
VJ....W1BC High Q Dielectric
VJ....W1BC MLCC Chip Array
VJ....W1BC Ultra High Q/Low ESR
VJ....W1BC Ultra Small Series 0201 |
RESISTORS
M/D55342
Military Thick Film/Thin Film Chip Resistors
Features
- Qualified to, and comply with, existing MIL-PRF-55342 specifications
- Established reliability with verified failure rates (M, P, R, U, S, V, and T [space] levels)
- Offered in all 13 MIL case sizes, and in resistance values from 1 Ω to 22 MΩ
- Fulfill a need in designs and applications that require higher reliability resistors
E/H (Military M/D55342) - Thin Film Resistors
E/H (T-Level) (Military M/D55342) - Thin Film Resistors
E/H (Ta2N) (Military M/D55342) - Thin Film Resistors
RCWPM (Military M/D55342) - Thick Film Chip Resistors |
CAPACITORS
MAL2 102
Power High-Ripple Current Screw Terminal
Features
- Long useful life: up to 15 000 h at 85 °C and 400 000 h at 40 °C
- Available in voltages 200 V to 450 V; capacitance values from 220 µF to 33 000 µF
- Sizes up to 90 mm x 220 mm; standard and high-current terminals
MAL2 102
|
RESISTORS
WSL1206
SMD, Power Metal Strip® Resistor
Features
- 0.25 W current sensing resistor in 1206 package size
- Features a very low 1.0 mΩ to 200 mΩ resistance value range
- Standard tolerance of 1.0 % with 0.5 % available
- High-temperature performance up to + 170 °C
WSL WSL...18 High Power
|
CAPACITORS
MKP1848 DC-Link
Automotive Grade MKP DC-Link Capacitor
Features
- High CV product (1 µF to 400 µF; 450 V to 1200 V), with operating temperature up to 105 °C
- Long life (100 000 h at UNDC and 70 °C)
- High ripple current capabilities: up to 54 A
- AEC-Q200 qualified, automotive grade
MKP1848 DC-Link |
RESISTORS
MCS0402/MCT0603/MCU0805/MCA1206
Thin Film Chip Resistors
Features
- CECC approved according to EN 140401-801
- Available from 1R to 10M
- Low TCR down to ± 10 ppm/K, tight tolerance down to 0.1 %
- High-pulse load robustness
MCS0402, MCT0603, MCU0805, MCA1206 - Professional
MCS0402, MCT0603, MCU0805, MCA1206 - Precision |
OPTOELECTRONICS
VO3120
2.5 A Output Current Optoisolated IGBT/MOSFET Gate Driver
Features
- 2.5 A peak driver current
- 5300 V isolation voltage
- 25 kV/µs CMR
- 110 °C operating temperature
VO3120 |
DIDOES
BZT03C
Glass-Passivated Junction Zener Diode
Features
- Hermetically sealed package
- Clamping time in picoseconds
- RoHS-compliant
- Halogen-free
BZT03C |
MOSFETs
SiHG47N60E/SiHW47N60E
Single, 600 V N-Channel Power MOSFETs
Features
- High-performance E Series high-voltage Super Junction technology
- Maximum current of 47 A
- TO-247 packaging
- Maximum on-resistance of 0.064 Ω at VGS = 10 V
SiHG47N60E SiHW47N60E |
RECTIFIERS
VS-40TPS08PBF
40 A High-Voltage Phase Control Thyristor
Features
- Designed and qualified according to JEDEC-JESD47
- Low IGT parts available
- RoHS-compliant
- 125 °C maximum operating junction temperature
VS-40TPS08PBF |
CAPACITORS
293D
SMD Tantalum Molded Chip Capacitor
Features
- Tantamount®, standard industrial grade
- Molded case available in six case codes
- Terminations: 100 % matte tin, standard, tin/lead available
- Compatible with high volume automatic pick and place equipment
293D
|
RESISTORS
WSL1206
SMD, Power Metal Strip® Resistor
Features
- 0.25 W current sensing resistor in 1206 package size
- Features a very low 1.0 mΩ to 200 mΩ resistance value range
- Standard tolerance of 1.0 % with 0.5 % available
- High-temperature performance up to + 170 °C
WSL WSL...18 High Power
|
INDUCTORS
IHLP-4040DZ
Low-Profile, High-Current IHLP® Inductor
Features
- Shielded construction
- Handles high transient current spikes without saturation
- Ultra-low buzz noise due to composite construction
- 100 % lead (Pb)-free and RoHS-compliant
IHLP-4040DZ-01 IHLP-4040DZ-11 IHLP-4040DZ-1A
IHLP-4040DZ-51 IHLP-4040DZ-5A IHLP-4040DZ-A1 |
RESISTORS
TNPW e3 Series
High Stability Thin Film Chip Resistors
Features
- Low temperature coefficient and tight tolerances: ± 0.1 %, ± 10 ppm/K
- Excellent overall stability at harsh environmental conditions
- AEC-Q200 qualified, automotive grade
- Case sizes: 0402 to 1210
TNPW e3 |
DIODES
SM6T
600 W Surface-Mount TVS in TO-214AA
Features
- Low-profile package
- Glass passivated chip junction
- 600 W peak pulse power capability with a 10/1000 µs waveform
- Available in unidirectional and bidirectional versions
SM6T Series SM6T Series (Halogen-Free) |
DIODES
BAS21
Silicon Epitaxial Single Diode
Features
- AEC-Q101 qualified
- SOT-23 package
- Green version available
- Reverse voltage 250 V
BAS19-V, BAS20-V, BAS21-V
BAS19-V-G, BAS20-V-G, BAS21-V-G |
OPTOELECTRONICS
VO615A
Phototransistor Output, High Temperature
Features
- DIP-4 and SMD-4 package
- High ambient temperature of 110 °C
- Isolation voltage 5000 VRMS
VO615A |
ICs
DG2706
High-Speed, Quad SPDT Analog Switch
Features
- Low crosstalk of - 70 dB
- High off-isolation of - 90 dB
- Guaranteed on-resistance of 3 Ω at 3.15 V
- Low-voltage logic threshold
DG2706 |
MOSFETs
Si7164DP
Single 60 V N-Channel Power MOSFET
Features
- Thermally enhanced PowerPAK® SO-8 packaging
- Maximum on-resistance down to 0.00625 Ω
- Typical gate charge of 49.5 nC at VGS = 10 V
Si7164DP |
MOSFETs
Si1965DH
Dual 12 V P-Channel Power MOSFET
Features
- SC-70 packaging
- Maximum on-resistance down to 0.0390 Ω
- Typical gate charge of 1.7 nC at VGS = 4.5 V
Si1965DH |
|
设置
快速交货
免运费
国际贸易术语
支付类型
市场产品
