Single FETs, MOSFETs

Results: 24
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesonsemiQorvoRohm SemiconductorSTMicroelectronicsWolfspeed, Inc.
Series
-CoolMOS™ CFD7CoolSiC™CoolSiC™ Gen 2StrongIRFET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveNot For New Designs
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
150 V650 V1200 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)18A (Tc)26A (Tc)36A (Tc)48A52A (Tc)55A (Tc)56A (Tc)60A (Tc)70A (Tc)106A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V12V15V15V, 18V15V, 20V18V18V, 20V-
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V7.7mOhm @ 89.9A, 18V8.5mOhm @ 146.3A, 18V9.9mOhm @ 108A, 18V11mOhm @ 100A, 12V11.3mOhm @ 93A, 20V13mOhm @ 100A, 18V18mOhm @ 58.2A, 10V18mOhm @ 75A, 18V18.4mOhm @ 54.3A, 18V22mOhm @ 80.28A, 15V40.9mOhm @ 25.6A, 18V
Vgs(th) (Max) @ Id
2.7V @ 50mA3.6V @ 22.08mA4.3V @ 25mA4.5V @ 2.91mA4.6V @ 265µA5V @ 1mA5.1V @ 28.3mA5.1V @ 30mA5.2V @ 10mA5.2V @ 11mA5.2V @ 23.4mA5.2V @ 47mA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 18 V13.4 nC @ 18 V23 nC @ 18 V31 nC @ 18 V51 nC @ 18 V52 nC @ 15 V63 nC @ 18 V68 nC @ 18 V94 nC @ 18 V145 nC @ 18 V178 nC @ 20 V179 nC @ 18 V195 nC @ 18 V200 nC @ 10 V
Vgs (Max)
+18V, -15V+19V, -8V+20V, -10V+20V, -5V+20V, -7V±20V+22V, -10V+22V, -4V+22V, -8V+23V, -10V+23V, -5V+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
312 pF @ 800 V491 pF @ 800 V763 pF @ 800 V1060 pF @ 800 V1620 pF @ 800 V1900 pF @ 800 V1969 pF @ 800 V2160 pF @ 800 V2290 pF @ 800 V4580 pF @ 25 V4580 pF @ 800 V4689 pF @ 325 V
FET Feature
-Current Sensing
Power Dissipation (Max)
3.8W (Ta), 556W (Tc)83W (Tc)107W (Tc)136W (Tc)150W (Tc)227W (Tc)228W (Tc)273W (Tc)300W (Tc)388W (Tc)446W (Tc)455W (Tc)483W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
D2PAK-7ModulePG-TO247-3PG-TO247-4-1PG-TO247-4-11PG-TO247-4-3PG-TO247-4-8PG-TO247-4-U02PG-TO263-7-12TO-247-4TO-247-4L
Package / Case
ModuleTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
24Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IRF150P220AKMA1
IRF150P220AKMA1
MOSFET N-CH 150V 203A TO247-3
Infineon Technologies
1,455
In Stock
1 : ¥91.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
203A (Tc)
10V
2.7mOhm @ 100A, 10V
4.6V @ 265µA
200 nC @ 10 V
±20V
12000 pF @ 75 V
-
3.8W (Ta), 556W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
CoolSiC Series
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
217
In Stock
1 : ¥103.03000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
1,141
In Stock
1 : ¥144.08000
Cut Tape (CT)
1,000 : ¥91.25666
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
48A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
144
In Stock
1 : ¥271.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 800 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
853
In Stock
1 : ¥275.11000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 25 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
D2PAK-7
NVBG015N065SC1
SIC MOS D2PAK-7L 650V
onsemi
595
In Stock
1 : ¥305.90000
Cut Tape (CT)
800 : ¥202.85524
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
145A (Tc)
15V, 18V
18mOhm @ 75A, 18V
4.3V @ 25mA
283 nC @ 18 V
+22V, -8V
4689 pF @ 325 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R007M2HXTMA1
IMBG65R007M2HXTMA1
SICFET N-CH 650V 238A TO263-7
Infineon Technologies
205
In Stock
1 : ¥313.86000
Cut Tape (CT)
1,000 : ¥211.42644
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
238A (Tc)
15V, 20V
8.5mOhm @ 146.3A, 18V
5.6V @ 2.97mA
179 nC @ 18 V
+23V, -7V
6359 pF @ 400 V
-
789W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
436
In Stock
1 : ¥485.69000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-4 Top
G3R12MT12K
1200V 12M TO-247-4 G3R SIC MOSFE
GeneSiC Semiconductor
346
In Stock
1 : ¥509.09000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
157A (Tc)
15V, 18V
13mOhm @ 100A, 18V
2.7V @ 50mA
288 nC @ 15 V
+22V, -10V
9335 pF @ 800 V
-
567W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
C3M0065100K
E3M0016120K
SIC, MOSFET, 16M, 1200V, TO-247-
Wolfspeed, Inc.
226
In Stock
1 : ¥634.95000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
125A (Tc)
15V
22mOhm @ 80.28A, 15V
3.6V @ 22.08mA
223 nC @ 15 V
+19V, -8V
6922 pF @ 1000 V
-
483W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
TO-247-4L
UF3SC120009K4S
SICFET N-CH 1200V 120A TO247-4
Qorvo
1,027
In Stock
1 : ¥654.32000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
120A (Tc)
12V
11mOhm @ 100A, 12V
6V @ 10mA
234 nC @ 15 V
±20V
8512 pF @ 100 V
-
789W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
CoolSiC_MOSFET
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Infineon Technologies
2,597
In Stock
1 : ¥70.85000
Cut Tape (CT)
1,000 : ¥40.18075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
-
125mOhm @ 8.5A, 18V
5.7V @ 3.7mA
23 nC @ 18 V
+18V, -15V
763 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
352
In Stock
1 : ¥112.39000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
54.4mOhm @ 19.3A, 18V
5.2V @ 10mA
51 nC @ 18 V
+20V, -5V
1620 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
159
In Stock
1 : ¥128.57000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
CoolSiC_MOSFET
IMBG120R030M1HXTMA1
SICFET N-CH 1.2KV 56A TO263
Infineon Technologies
683
In Stock
1 : ¥134.31000
Cut Tape (CT)
1,000 : ¥85.04528
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
-
41mOhm @ 25A, 18V
5.7V @ 11.5mA
63 nC @ 18 V
+18V, -15V
2290 pF @ 800 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SILICON CARBIDE POWER MOSFET 120
SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120
STMicroelectronics
598
In Stock
1 : ¥190.47000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
52mOhm @ 30A, 18V
5V @ 1mA
94 nC @ 18 V
+22V, -10V
1969 pF @ 800 V
-
388W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
170
In Stock
1 : ¥415.42000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
202A (Tc)
18V, 20V
11.3mOhm @ 93A, 20V
5.1V @ 30mA
178 nC @ 20 V
+23V, -5V
5703 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-4-11
TO-247-4
IMBG120R220M1HXTMA1
IMBG120R220M1HXTMA1
SICFET N-CH 1.2KV 13A TO263
Infineon Technologies
948
In Stock
1 : ¥50.57000
Cut Tape (CT)
1,000 : ¥28.69819
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
-
294mOhm @ 4A, 18V
5.7V @ 1.6mA
9.4 nC @ 18 V
+18V, -15V
312 pF @ 800 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
240
In Stock
30 : ¥133.02333
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
106A (Tc)
10V
18mOhm @ 58.2A, 10V
4.5V @ 2.91mA
234 nC @ 10 V
±20V
11660 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
BSM300D12P3E005
BSM300C12P3E201
SICFET N-CH 1200V 300A MODULE
Rohm Semiconductor
4
In Stock
1 : ¥5,135.23000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
300A (Tc)
-
-
5.6V @ 80mA
-
+22V, -4V
15000 pF @ 10 V
-
1360W (Tc)
-40°C ~ 150°C (TJ)
-
-
Chassis Mount
Module
Module
CoolSiC_MOSFET
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
20
In Stock
1 : ¥59.77000
Cut Tape (CT)
1,000 : ¥33.88441
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
0
In Stock
Check Lead Time
1 : ¥395.06000
Cut Tape (CT)
1,000 : ¥277.63137
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
189A (Tc)
15V, 18V
7.7mOhm @ 89.9A, 18V
5.1V @ 28.3mA
195 nC @ 18 V
+23V, -10V
6380 pF @ 800 V
-
800W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
0
In Stock
Check Lead Time
1 : ¥144.33000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
70A (Tc)
15V, 18V
40.9mOhm @ 25.6A, 18V
5.2V @ 11mA
68 nC @ 18 V
+20V, -7V
2160 pF @ 800 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
BSM180C12P2E202
BSM600C12P3G201
SICFET N-CH 1200V 600A MODULE
Rohm Semiconductor
0
In Stock
4 : ¥10,268.70000
Tray
-
Tray
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
600A (Tc)
-
-
5.6V @ 182mA
-
+22V, -4V
28000 pF @ 10 V
-
2460W (Tc)
175°C (TJ)
-
-
Chassis Mount
Module
Module
Showing
of 24

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.