Shown here is the TRENCHSTOP on the left-hand side and the TS5 technology on the right-hand side. The engineer took into consideration 50 A Ic devices for the TRENCHSTOP the 60T and HighSpeed 3 and for the TS5, the H5, and F5 device. The main differences of the H5 and F5 variant will be explained on the next slides. Here is a deeper look on the parameters and the improvements of the TS5 technology: Vbr: shows that Infineon increased the voltage 50 V. The Vce(sat) is very low for the TS5 compared to the HS3. The Trenchstop5 is 1.65 V vs. 1.85 V for the HS3. Eoff is done at Rg of 12 ohm for the H5/F5 and 7 ohm for the 60T; Tj :25°C . Vf and trr is highlighting the improvement of the TS5 technology, including the Diode. Especially the trr is much faster with only 57 ns for the H5 and 52 ns for the F5 version. To summarize, the latest TS5 technology has about 30% less conduction and switching losses.