This presentation will start by giving users more information about Infineon‘s TRENCHSTOP technology development. The image shown here on the left-hand side shows the previous TRENCHSTOP technology compared to the latest TRENCHSTOP 5 technology on the right-hand side. While the TrenchStop technology offers benefits in certain applications such as traction motor control, which typically operates at speeds less than 16 kHz, the TrenchStop5 offers the ultimate performance in faster switching applications like high-power PFC circuits and UPS applications. This increase in performance is brought about by the inclusion of two advanced innovations from Infineon. Best shown by the above cross-sections of a transistor cell, a striking difference in the Gate structure of the device. The TrenchStop technology on the left shows a more traditional trench style gate which is used to modulate the conductivity of the PNP component of the IGBT. The latest TS5 technology on the right-hand side has a strip-type gate with a smaller pitch, which leads to a higher cell density. This innovative approach greatly reduces the Qg (gate charge) and consequently reduces switching losses. The second innovation is the application of industry leading, thin wafer technology. The wafer thickness was reduced by 25% to attain a reduction in Vce(sat) by 200 mV.