In summary, TRENCHSTOP™5 is the next generation of thin wafer technology for applications switching >10 kHz. Wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650 V. Translating this efficiency application tests show >25% reduction in package temperature when performing a plug-and-play approach with Infineon’s previous IGBT, the “HighSpeed 3”. Even more revolutionary, when replacing a TO-247 HighSpeed 3 IGBT with the TRENCHSTOP5 in a TO-220, case temperatures are >10% lower for the TRENCHSTOP5. The quantum leap of efficiency improvement provided by the TRENCHSTOP5 opens up new opportunities for designers to explore. In terms of switching and conduction losses, there is no other IGBT on the market that can match the performance of the TRENCHSTOP5.