In summary, eGaN® FETs can be used in parallel without loss of their switching characteristics. A formal analysis was conducted on a variety of layout configurations and topologies and the results were quantified through the use of a new metric, the Parallel Impact Figure, or PIF. The PIF can be used to compare layouts and predict circuit performance when more than one eGaN FET is used for each switch. For more information please see the eGaN design support site on the EPC website.