Nevertheless the results are excellent. Shown on this slide is a 12 VIN – 1.2 VOUT buck converter operating a 1 MHz with efficiencies of up to about 89%. For comparison the results from the same circuit operating with only a single eGaN FET are also shown. Due to the higher conduction losses the single-FET version cannot operate as efficiently at higher currents. Due to slightly lower switching losses, something that could be avoided with the more efficient layout B, the single-FET circuit has better light-load performance. This circuit was also compared with the one built with the best available silicon MOSFETs. Due to the higher switching losses, the silicon-based solution’s conversion efficiency is inferior.