With EPC’s eGaN technology, operation well beyond the 5~10MHz switching frequency is now possible and also allows for use in RF amplifier applications. EPC’s eGaN FETs not only switch at much higher frequencies, but they also allow operation with substantially narrower pulses (<100ns) to fully turn the device on and off, making possible applications that are out of reach of silicon based power FETs. Increased switching frequency also shrinks inductors and cuts area occupied by capacitors substantially.