The advantage of gallium nitride starts with on-resistance. As a high electron mobility FET, or “HEMT”, on-resistance (RDS(on)) times area is much lower than that of silicon, allowing devices to conduct a higher current in a smaller area. As a smaller device, the capacitances are also much lower than those of trench MOSFETs thus enabling very high switching speeds. It has the capability of switching hundreds of volts in nanoseconds, giving it multiple megahertz capability. Because there are no minority carriers, as there would be in a MOSFET when the reverse diode is conducting, there is no diode reverse recovery. In addition, eGaN devices can be designed for high voltages with much less impact on RDS(on) than silicon. To obtain higher-voltage devices, the distance between the drain and gate electrodes is increased.  Doing so increases the on-resistance of the FET. However, as the mobility of electrons in EPC’s eGaN FETs is about 100x of silicon, and critical electric field (breakdown voltage per distance) is about 10x of silicon, the impact on resistance of increasing blocking-voltage capability is much lower when compared with silicon.