eGaN FETs for DC-DC Conversion

eGan® FETs for DC-DC Conversion

EPC

This tutorial will discuss some of the key eGaN FET characteristics and the advantages offered by converters designed using EPC’s eGaN power FETs. Also, this presentation will discuss eGaN FET performance in high frequency 12V-1V DC-DC converters, 24V-1V DC-DC converters, and how the use of eGaN power FETs from EPC has made a 48V-1V converter practical for the first time. 

 

Related Parts

图片制造商零件编号描述功能嵌入式使用的 IC/零件可供货数量价格查看详情
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015半 H 桥驱动器（外部 FET）无EPC20150 - 立即发货
40 : ¥1,561.36
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EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货
40 : ¥2,060.12
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EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007半 H 桥驱动器（外部 FET）无EPC80070 - 立即发货
40 : ¥2,493.83
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EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货
40 : ¥1,561.36
散装
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PTM Published on: 2010-01-22

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.