For predicting switching performance (Rds(on) x Qgd) is used, as Qgd plays a dominant role when a device is switched with duty cycles below 50%. The switching figure of merit is more important in “hard switching” converter circuits. Here EPC’s first generation 40V, 100V, and 200V devices have been plotted as well as different silicon MOSFETs. Based on switching figure of merit, the eGaN FETs offer a distinct advantage over any equivalent voltage rated silicon devices. The 40 V eGaN FETs are comparable to the current, state of the art, 25V lateral silicon devices and EPC’s 200V devices have similar Figure of Merits as the best 100V silicon available today.