Equipment powered by its Ethernet connection has two basic challenges, (1) the power source is limited and well-defined, and (2) the products are highly cost-competitive. A 13W, IEEE 802.3 compliant PoE converter utilizing eGaN power FETs is compared to a MOSFET counterpart. It can be seen that the 300kHz MOSFET based and eGaN based efficiency results are almost identical despite a 50% higher in Rds(on) of the eGaN FET compared to the MOSFET. The key point to note here is how much less the drop in efficiency for the eGaN solution is when the switching frequency is increased to 500kHz – about 0.5% for the eGaN solution – vs. about 2% for the MOSFET solution.