EPC’s eGaN power FETs’  low switching losses are possible due to the high switching speed and low Qg requirements. Low Qrr and Qoss losses of EPC’s eGaN FETs also contribute to increased system efficiency. Conduction figure of merit (Rds(on) x QG) is generally used to compare expected device performance of silicon based power MOSFETs. EPC’s first generation 40V, 100V, and 200V products are plotted against industry best silicon power MOSFETS ranging from 25V to 200V.  EPC’s eGaN FETs boast figure of merits which are, in some cases, an order of magnitude superior.