In summary; EPC’s eGaN®  power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs. Because of the reduced RDS(On) x area, the eGaN FETs are able to conduct higher current in a smaller space and at higher switching frequencies that would be possible with silicon MOSFETs. The higher frequency operation allows these devises to switch hundreds of volts in nanoseconds, and reduces the size of required inductors and capacitors, saving valuable PC board space and cost. Power converter topologies can greatly benefit from the added performance; improved converter efficiency, with simplicity of design.