A MOSFET and an eGaN FET based converter were operated at 300kHz and 500kHz respectively to demonstrate the advantages offered by the eGaN FET solution. There are a few important points that can be made from evaluation of these efficiency results: At 300kHz, eGaN FETs offer a small improvement in efficiency at all loads and have comparable efficiencies at full load despite the 50% greater on resistance of the eGaN FET in the primary socket when compared to the MOSFET RDS(ON). The eGaN FET converter efficiency performance relative to the MOSFET design significantly improves as frequency increases and is about 4% more efficient at 500kHZ.