With an input voltage of 180 V and a DC bus output voltage of 385 V, a 4.2 kW power level was easily achieved with a device case temperature on the heatsink of 79°C and an efficiency of almost 98%. This was viewed as an impressive solution over what silicon carbide could achieve to a point where the customer stated that they would look at Transphorm’s GaN FET technology in future development of high efficiency power supply designs.