GaN technology is all about the “half bridge” configuration that is used in any bridge type topology. The hard switched half bridge circuit topologies are where GaN shows its highest performance in power density, lower system cost, and size/weight. This can be realized in the hard switched bridgeless totem-pole PFC. Even though silicon carbide can be used in these half bridge topologies, its performance will be lower and its price will be more. This slide shows a hard switched DC to DC synchronous boost circuit topology where the latest silicon carbide MOSFET is compared to Transphorm’s latest GaN FET technology. This circuit is operated with 240 V input, boosted to a 400 V output operating at 100 kHz. The GaN devices show an increase in efficiency from 1800 W through 7000 W. Even though silicon carbide has a flatter on resistance curve over temperature, it still performs worse than GaN at the extreme power levels. The overall static and dynamic advantage of GaN results in a higher performing solution.