Transphorm’s GaN is one of the only wide band gap, whether SiC or GaN, that is both JEDEC and AEC-Q101 qualified. There are two important areas when qualifying GaN FET technology. These are “Infant Mortality” and “wear out” failures, which are the left and right sides respectively of the failure rate versus time curve shown here on the far right. This is also referred to as the bathtub curve. JEDEC/Extended JEDEC and AEC-Q101 qualification tests are used to look at the infant mortality failure rate of Transphorm’s GaN technology. The details are always available in Transphorm’s qualification reports.