DigiKey PTM库 > GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies

GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies

Transphorm

This presentation will cover an overview of GaN versus silicon carbide and how GaN compares with silicon carbide in a DC to DC hard switched synchronous boost converter. In addition, it will provide a customer example using a bridgeless totem-pole PFC and it will show how to increase performance by reducing the high current path DC resistance.

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