There are two areas that will be discussed; performance and cost, showing an overall advantage to GaN. First, let's discuss GaN’s technical advantages over silicon carbide. Outside of GaN not requiring a negative gate drive, the two areas that define differences between the two technologies are the speed of the switching transitions and the lower reverse conduction losses. These two areas, when combined in a hard switched half bridge configuration, offer a competitive advantage to GaN. Even though silicon carbide does offer a lower temperature coefficient of resistance (commonly referred to as TCR), this typically only helps at extreme high power levels where most power supplies spend little time. This presentation will show that even at the higher power levels where silicon carbide should be the clear winner, it is not. The other area of importance to customers is "how much does this device cost?" GaN is still working at becoming a mature technology. In doing so, it will have greater year-over-year price reductions than say silicon superjunction technology, and in some cases silicon carbide, especially as volumes begin to increase.