In summary, Transphorm compared the performance between silicon carbide technology against Transphorm’s latest GaN FET technology. It was shown that Transphorm’s GaN still edged out silicon carbide with increased efficiency due to its faster rise and fall times, which also helped in better thermal results. A customer example was discussed that showed an efficiency of almost 98% at 4.2 kW and 98.6% at half load. Additional design optimization was discussed along with GaN’s year-over-year pricing reduction. Finally, Transphorm’s GaN FET technology is one of the only JEDEC and AEC-Q101 qualified technologies on the market.