Single FETs, MOSFETs

Results: 19
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesMicro Commercial CoMicrochip TechnologyonsemiWolfspeed, Inc.
Series
-C2M™C3M™CoolSiC™G2R™G3R™G3R™, LoRing™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V1200 V1700 V2000 V3300 V
Current - Continuous Drain (Id) @ 25°C
3A4A (Tc)9A (Tc)18A (Tc)21A (Tc)26A (Tc)41A (Tc)50A (Ta), 300A (Tc)59A (Tc)60A (Tc)61A (Tc)63A (Tc)66A (Tc)68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V15V, 18V15V, 20V20V
Rds On (Max) @ Id, Vgs
0.95mOhm @ 50A, 10V26mOhm @ 75A, 15V40mOhm @ 60A, 20V45mOhm @ 30A, 20V50mOhm @ 40A, 20V53.5mOhm @ 33.3A, 15V56mOhm @ 35A, 20V58mOhm @ 40A, 15V59mOhm @ 50A, 20V90mOhm @ 20A, 15V131mOhm @ 10A, 18V208mOhm @ 12A, 15V224mOhm @ 10A, 15V585mOhm @ 4A, 15V
Vgs(th) (Max) @ Id
2.69V @ 7.5mA2.7V @ 15mA2.7V @ 2mA2.7V @ 5mA2.7V @ 8mA3.25V @ 2.5mA (Typ)3.5V @ 10mA (Typ)3.5V @ 2mA3.6V @ 9.2mA4V @ 18mA4V @ 250µA4.3V @ 10mA4.3V @ 20mA4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15.5 nC @ 20 V18 nC @ 15 V21 nC @ 20 V29 nC @ 15 V51 nC @ 15 V54 nC @ 15 V55 nC @ 18 V99 nC @ 15 V106 nC @ 20 V108 nC @ 10 V178 nC @ 20 V182 nC @ 15 V188 nC @ 20 V200 nC @ 20 V
Vgs (Max)
+15V, -4V+15V, -5V±15V+20V, -16V+20V, -5V+20V, -7V+22V, -10V+23V, -10V+25V, -10V+25V, -15V+25V, -5V
Input Capacitance (Ciss) (Max) @ Vds
124 pF @ 1000 V238 pF @ 1000 V454 pF @ 1000 V854 pF @ 1000 V1272 pF @ 1000 V1560 pF @ 800 V1781 pF @ 800 V2900 pF @ 1000 V3300 pF @ 1000 V3672 pF @ 1000 V4160 pF @ 800 V4230 pF @ 800 V4523 pF @ 1000 V6985 pF @ 25 V
Power Dissipation (Max)
4.3W (Ta), 159.6W (Tc)69W74W (Tc)88W (Tc)145W (Tc)175W (Tc)207W (Tc)217W (Tc)278W (Tc)326W (Tc)348W (Tc)370W (Tc)428W (Tc)438W (Tc)
Operating Temperature
-60°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
8-HPSOFD2PAK-7D3PAKPG-TO247-4-U04SOT-227TO-247-3TO-247-4TO-247-4LTO-247ABTO-263-7
Package / Case
8-PowerSFNSOT-227-4, miniBLOCTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
19Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,677
In Stock
1 : ¥59.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
537
In Stock
1 : ¥88.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
606
In Stock
1 : ¥100.48000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
G3R160MT12J-TR
G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
1,452
In Stock
1 : ¥106.56000
Cut Tape (CT)
800 : ¥81.60294
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
224mOhm @ 10A, 15V
2.7V @ 5mA
29 nC @ 15 V
+15V, -5V
854 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
171
In Stock
1 : ¥154.01000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
26A (Tc)
15V, 18V
131mOhm @ 10A, 18V
5.5V @ 6mA
55 nC @ 18 V
+20V, -7V
-
-
217W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
TO-247-3
NTHL040N120SC1
SICFET N-CH 1200V 60A TO247-3
onsemi
283
In Stock
1 : ¥162.47000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1781 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
1,980
In Stock
1 : ¥221.82000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
99 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-3
G3R45MT17D
SIC MOSFET N-CH 61A TO247-3
GeneSiC Semiconductor
971
In Stock
1 : ¥268.70000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4
NTH4L028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER
onsemi
199
In Stock
3,150
Factory
1 : ¥314.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
81A (Tc)
20V
40mOhm @ 60A, 20V
4.3V @ 20mA
200 nC @ 20 V
+25V, -15V
4230 pF @ 800 V
-
535W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4 Top
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
1,053
In Stock
1 : ¥880.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
124A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
809W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
GA100JT12-227
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
GeneSiC Semiconductor
153
In Stock
1 : ¥1,112.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
100A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
523W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
272
In Stock
1 : ¥2,427.31000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
8-HPSOF Top View
FDBL9403-F085T6
MOSFET N-CH 40V 50A/300A 8HPSOF
onsemi
338
In Stock
1 : ¥53.12000
Cut Tape (CT)
2,000 : ¥25.87617
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
50A (Ta), 300A (Tc)
-
0.95mOhm @ 50A, 10V
4V @ 250µA
108 nC @ 10 V
+20V, -16V
6985 pF @ 25 V
-
4.3W (Ta), 159.6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HPSOF
8-PowerSFN
C2M0045170P
C2M0045170P
SICFET N-CH 1700V 72A TO247-4
Wolfspeed, Inc.
439
In Stock
1 : ¥925.38000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
72A (Tc)
20V
59mOhm @ 50A, 20V
4V @ 18mA
188 nC @ 20 V
+25V, -10V
3672 pF @ 1000 V
-
520W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247AB
SICW1000N170A-BP
N-CHANNEL MOSFET,TO-247AB
Micro Commercial Co
306
In Stock
1 : ¥43.02000
Bulk
-
Bulk
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
3A
15V, 20V
1.32Ohm @ 1.5A, 20V
4.5V @ 1mA
15.5 nC @ 20 V
+25V, -5V
124 pF @ 1000 V
-
69W
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AB
TO-247-3
GA20JT12-263
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
GeneSiC Semiconductor
3,125
In Stock
1 : ¥153.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
4A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER
onsemi
56
In Stock
1 : ¥296.94000
Cut Tape (CT)
800 : ¥205.67913
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
71A (Tc)
20V
40mOhm @ 60A, 20V
4.3V @ 20mA
222 nC @ 20 V
+25V, -15V
4160 pF @ 800 V
-
428W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
MSC035SMA170B
MOSFET SIC 1700 V 45 MOHM TO-247
Microchip Technology
9
In Stock
1 : ¥333.06000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-60°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
D3PAK
MSC035SMA170S
MOSFET SIC 1700V 35 MOHM TO-268
Microchip Technology
25
In Stock
1 : ¥340.69000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
59A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
278W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Showing
of 19

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.