Single FETs, MOSFETs

Results: 5
Drain to Source Voltage (Vdss)
1700 V3300 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)4A (Tc)5A (Tc)35A63A (Tc)
Rds On (Max) @ Id, Vgs
50mOhm @ 40A, 20V156mOhm @ 20A, 20V1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.5V @ 10mA (Typ)3.5V @ 2mA4V @ 2mA5.5V @ 500µA-
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 20 V21 nC @ 20 V145 nC @ 20 V340 nC @ 20 V
Vgs (Max)
+20V, -10V+20V, -5V+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V139 pF @ 1000 V238 pF @ 1000 V3706 pF @ 1000 V7301 pF @ 1000 V
Power Dissipation (Max)
44W (Tc)54W (Tc)74W (Tc)536W (Tc)-
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-247-3TO-247-4TO-263-7
Package / Case
TO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
8,274
In Stock
1 : ¥44.66000
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N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
282
In Stock
1 : ¥2,427.39000
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SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
GA20JT12-263
G2R1000MT17J
SIC MOSFET N-CH 3A TO263-7
GeneSiC Semiconductor
12,490
In Stock
1 : ¥52.87000
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SiCFET (Silicon Carbide)
1700 V
3A (Tc)
20V
1.2Ohm @ 2A, 20V
4V @ 2mA
-
+20V, -10V
139 pF @ 1000 V
-
54W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
GeneSiC Semiconductor
3,145
In Stock
1 : ¥153.44000
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N-Channel
SiCFET (Silicon Carbide)
3300 V
4A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G2R120MT33J
SIC MOSFET N-CH TO263-7
GeneSiC Semiconductor
429
In Stock
1 : ¥886.91000
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N-Channel
SiCFET (Silicon Carbide)
3300 V
35A
20V
156mOhm @ 20A, 20V
-
145 nC @ 20 V
+25V, -10V
3706 pF @ 1000 V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.