10A (Tc) Single FETs, MOSFETs

Results: 370
Manufacturer
Alpha & Omega Semiconductor Inc.Central Semiconductor CorpComchip TechnologyDiodes IncorporatedDiotec SemiconductorEVVOFairchild SemiconductorGeneSiC SemiconductorGoford SemiconductorGood-Ark SemiconductorHarris CorporationInfineon Technologies
Series
-Automotive, AEC-Q101, STripFET™ F7CoolGaN™CoolMOS™CoolMOS™ C7CoolMOS™ P7CoolMOS™ PFD7CoolMOS™PFD7DeepGATE™, STripFET™ VIDepletionEECOPACK®
Packaging
BoxBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
12 V20 V30 V40 V55 V60 V75 V80 V100 V120 V150 V190 V
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V0V, 6V1.5V, 4.5V1.8V, 4.5V2.5V, 4.5V4V, 10V4V, 5V4.5V, 10V4.5V, 20V5V5V, 10V10V10V, 12V10V, 15V
Rds On (Max) @ Id, Vgs
9.7mOhm @ 13A, 10V11mOhm @ 10A, 4.5V12mOhm @ 10A, 10V12mOhm @ 6A, 10V13.5mOhm @ 10A, 10V14mOhm @ 10A, 10V14mOhm @ 5A, 10V15mOhm @ 10A, 10V18mOhm @ 8A, 10V19mOhm @ 10A, 10V20mOhm @ 5A, 10V21mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.2V @ 250µA1.5V @ 250µA1.6V @ 960µA2V @ 250µA2V @ 30µA2.5V @ 1mA2.5V @ 250µA2.5V @ 5.5mA2.7V @ 2mA2.8V @ 1.25mA (Typ)2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 6 V3.7 nC @ 4.5 V4.6 nC @ 5 V6.4 nC @ 5 V6.4 nC @ 10 V6.5 nC @ 10 V7.5 nC @ 10 V7.9 nC @ 5 V8.4 nC @ 5 V10 nC @ 15 V11 nC @ 10 V11.2 nC @ 10 V
Vgs (Max)
-10V±5V±8V±10V±12V±15V±16V±20V+22V, -10V+22V, -5V+22V, -6V±22V+25V, -10V±25V
Input Capacitance (Ciss) (Max) @ Vds
55 pF @ 400 V157 pF @ 400 V259 pF @ 1000 V265 pF @ 25 V300 pF @ 25 V310 pF @ 25 V321 pF @ 25 V331 pF @ 800 V340 pF @ 48 V350 pF @ 25 V350 pF @ 30 V357 pF @ 1000 V
FET Feature
-Current SensingDepletion Mode
Power Dissipation (Max)
850mW (Ta), 20W (Tc)1.4W (Tc)1.5W (Ta)1.56W (Ta)1.56W (Ta), 85W (Tc)1.75W (Ta), 40W (Tc)1.92W (Ta), 31.2W (Tc)1.92W (Ta), 36.7W (Tc)2W (Ta), 54W (Tc)2W (Ta), 69.4W (Tc)2W (Ta), 78.1W (Tc)2.1W (Ta), 20W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)175°C175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
4-Microfoot4-PQFN (8x8)6-MicroFET (2x2)6-QFN (2x2)8-DFN (3.15x3.05)8-DFN (3x3)8-QFN (2x2)8-SOIC8-SOP8-TSSOP22-QFN (5x7)CPT3
Package / Case
4-PowerTSFN4-XFBGA, CSPBGA6-PowerUDFN6-WDFN Exposed Pad8-LDFN Exposed Pad8-PowerUDFN8-PowerVDFN8-SMD, Flat Leads8-SOIC (0.154", 3.90mm Width)8-TSSOP (0.173", 4.40mm Width)22-PowerVFQFNISOPLUS220™
Stocking Options
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Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRLR120NTRPBF
MOSFET N-CH 100V 10A DPAK
Infineon Technologies
12,664
In Stock
1 : ¥8.21000
Cut Tape (CT)
2,000 : ¥3.38646
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
4V, 10V
185mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
FDMA8051L
FDMA8051L
MOSFET N-CH 40V 10A 6MICROFET
onsemi
15,691
In Stock
1 : ¥8.78000
Cut Tape (CT)
3,000 : ¥3.62189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
10A (Tc)
4.5V, 10V
14mOhm @ 10A, 10V
3V @ 250µA
20 nC @ 10 V
±20V
1260 pF @ 20 V
-
2.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-MicroFET (2x2)
6-WDFN Exposed Pad
RB098BM-40FNSTL
RD3T100CNTL1
MOSFET N-CH 200V 10A TO252
Rohm Semiconductor
10,000
In Stock
1 : ¥12.56000
Cut Tape (CT)
2,500 : ¥5.64644
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
10A (Tc)
10V
182mOhm @ 5A, 10V
5.25V @ 1mA
25 nC @ 10 V
±30V
1400 pF @ 25 V
-
85W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB
IRF740PBF
MOSFET N-CH 400V 10A TO220AB
Vishay Siliconix
2,789
In Stock
1 : ¥16.09000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1400 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263AB
IRF740ASPBF
MOSFET N-CH 400V 10A D2PAK
Vishay Siliconix
2,830
In Stock
1 : ¥20.52000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
36 nC @ 10 V
±30V
1030 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PowerPak® SO-8
SIHJ10N60E-T1-GE3
MOSFET N-CH 600V 10A PPAK SO-8
Vishay Siliconix
13,146
In Stock
1 : ¥23.07000
Cut Tape (CT)
3,000 : ¥10.41066
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
360mOhm @ 5A, 10V
4.5V @ 250µA
50 nC @ 10 V
±30V
784 pF @ 100 V
-
89W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
MFG_DPAK(TO252-3)
STD11NM60ND
MOSFET N-CH 600V 10A DPAK
STMicroelectronics
2,090
In Stock
1 : ¥29.31000
Cut Tape (CT)
2,500 : ¥14.27668
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
450mOhm @ 5A, 10V
5V @ 250µA
30 nC @ 10 V
±25V
850 pF @ 50 V
-
90W (Tc)
150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
IXTP10P50P
MOSFET P-CH 500V 10A TO220AB
Littelfuse Inc.
1,127
In Stock
1 : ¥52.87000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
500 V
10A (Tc)
10V
1Ohm @ 5A, 10V
4V @ 250µA
50 nC @ 10 V
±20V
2840 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
C2D10120D
C2M0280120D
SICFET N-CH 1200V 10A TO247-3
Wolfspeed, Inc.
14,348
In Stock
1 : ¥89.98000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
20V
370mOhm @ 6A, 20V
2.8V @ 1.25mA (Typ)
20.4 nC @ 20 V
+25V, -10V
259 pF @ 1000 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SCT2450KEGC11
SCT2450KEGC11
1200V, 10A, THD, SILICON-CARBIDE
Rohm Semiconductor
539
In Stock
1 : ¥93.67000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
18V
585mOhm @ 3A, 18V
4V @ 900µA
27 nC @ 18 V
+22V, -6V
463 pF @ 800 V
-
85W (Tc)
175°C
-
-
Through Hole
TO-247N
TO-247-3
TO-247-AD-EP-(H)
IXTH10N100D2
MOSFET N-CH 1000V 10A TO247
Littelfuse Inc.
464
In Stock
1 : ¥166.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
10A (Tc)
10V
1.5Ohm @ 5A, 10V
-
200 nC @ 5 V
±20V
5320 pF @ 25 V
Depletion Mode
695W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
PowerPak SC-70-6 Single
SQA403EJ-T1_GE3
MOSFET P-CH 30V 10A PPAK SC70-6
Vishay Siliconix
15,090
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.68659
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10A (Tc)
4.5V, 10V
20mOhm @ 5A, 10V
2.5V @ 250µA
33 nC @ 10 V
±20V
1880 pF @ 10 V
-
13.6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
PowerPak SC-70-6 Single
SQA405EJ-T1_GE3
MOSFET P-CH 40V 10A PPAK SC70-6
Vishay Siliconix
6,584
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.68659
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
10A (Tc)
4.5V, 10V
35mOhm @ 5A, 10V
2.5V @ 250µA
33 nC @ 10 V
±20V
1815 pF @ 25 V
-
13.6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
TO-252AA
FQD13N10LTM
MOSFET N-CH 100V 10A DPAK
onsemi
6,669
In Stock
60,000
Factory
1 : ¥5.83000
Cut Tape (CT)
2,500 : ¥2.20013
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
5V, 10V
180mOhm @ 5A, 10V
2V @ 250µA
12 nC @ 5 V
±20V
520 pF @ 25 V
-
2.5W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
600VMOS
IPN60R360PFD7SATMA1
MOSFET N-CH 600V 10A SOT223
Infineon Technologies
13,117
In Stock
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥3.26134
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
-
7W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-3-1
TO-261-3
TO-220AB
IRFZ14PBF
MOSFET N-CH 60V 10A TO220AB
Vishay Siliconix
54,778
In Stock
1 : ¥7.14000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
10V
200mOhm @ 6A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
300 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRLU120NPBF
MOSFET N-CH 100V 10A IPAK
Infineon Technologies
8,107
In Stock
1 : ¥7.22000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
4V, 10V
185mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
MFG_DPAK(TO252-3)
STD15P6F6AG
MOSFET P-CH 60V 10A DPAK
STMicroelectronics
10,699
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,500 : ¥3.07861
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
10V
160mOhm @ 5A, 10V
4V @ 250µA
6.4 nC @ 10 V
±20V
340 pF @ 48 V
-
35W (Tc)
175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FQD13N10TM
MOSFET N-CH 100V 10A DPAK
onsemi
6,264
In Stock
135,000
Factory
1 : ¥7.47000
Cut Tape (CT)
2,500 : ¥2.82874
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
10V
180mOhm @ 5A, 10V
4V @ 250µA
16 nC @ 10 V
±25V
450 pF @ 25 V
-
2.5W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD10P6F6
MOSFET P CH 60V 10A DPAK
STMicroelectronics
7,420
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,500 : ¥3.26878
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
10V
160mOhm @ 5A, 10V
4V @ 250µA
6.4 nC @ 10 V
±20V
340 pF @ 48 V
-
35W (Tc)
175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB
IRLZ14PBF
MOSFET N-CH 60V 10A TO220AB
Vishay Siliconix
2,742
In Stock
1 : ¥8.78000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
4V, 5V
200mOhm @ 6A, 5V
2V @ 250µA
8.4 nC @ 5 V
±10V
400 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
684
In Stock
1 : ¥8.87000
Tube
-
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
750mOhm @ 5A, 10V
4.5V @ 250µA
40 nC @ 10 V
±30V
1600 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
TO-220-F
STFU10NK60Z
MOSFET N-CH 600V 10A TO220FP
STMicroelectronics
366
In Stock
1 : ¥9.28000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
750mOhm @ 4.5A, 10V
4.5V @ 250µA
48 nC @ 10 V
±30V
1370 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-220AB
IRF740PBF-BE3
MOSFET N-CH 400V 10A TO220AB
Vishay Siliconix
3,735
In Stock
1 : ¥11.33000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
10A (Tc)
10V
550mOhm @ 5.3A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1400 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF740BPBF
MOSFET N-CH 400V 10A TO220AB
Vishay Siliconix
209
In Stock
1 : ¥11.74000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
400 V
10A (Tc)
10V
600mOhm @ 5A, 10V
5V @ 250µA
30 nC @ 10 V
±30V
526 pF @ 100 V
-
147W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
Showing
of 370

10A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.