This slide shows details from the second page of a MOSFET datasheet. Breakdown voltage is the minimum voltage that the device will withstand between the drain and source. The Vgs threshold is shown by the typical value, the minimum value, and the maximum value. In general, typical Rds(on) is not considered when benchmarking a MOSFET, it is necessary to look at the maximum Rds(on). The gate charge was explained on the previous slide, the Qgs and the Qgc are two components of the total gate charge. In general, in order to do a quick cross-reference, it is possible to just look at the breakdown voltage, Rds(on) and the total gate charge, and the package.